Influence of thermal phenomena on dc characteristics of the IGBT

Authors

  • Krzysztof Górecki Gdynia Maritime University
  • Paweł Górecki Gdynia Maritime University

Abstract

The paper concerns the study of the effect of thermal phenomena on characteristics of the IGBT. The used measurement set-ups and the results of measurements of dc characteristics of the selected transistor obtained under different cooling conditions are presented. The influence of the ambient temperature and the applied cooling system on the shape of these characteristics is discussed. In particular, attention has been paid to the untypical shape of non-isothermal characteristics of this element in the sub-threshold range.

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Published

2018-01-31

Issue

Section

Analog Electronics