CMOS Readout Circuit Integrated with Ionizing Radiation Detectors

Authors

  • Andrzej Szymanski
  • Dariusz Obrębski
  • Jacek Marczewski
  • Daniel Tomaszewski
  • Mirosław Grodner
  • Janusz Pieczynski

Abstract

This paper describes the work performed in ITE on integration in one CMOS chip the ionizing radiation detectors with dedicated readout electronics. At the beginning, some realizations of silicon detectors of ionizing radiation are presented together with most important issues related to these devices. Next, two developed test structures for readout electronics are discussed in detail together with main features of non-typical silicon process deployed.

 

References

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W. Kucewicz, P. Grabiec, K. Kucharski, J. Marczewski, W. Maziarz, H. Niemiec, F. Ruddell, M. Sapor, and D. Tomaszewski, “Development of Monolithic Active Pixel Sensor in SOI Technology Fabricated on the Wafer with Thick Device Layer,” in Proceedings of the 2008 IEEE Nuclear Science Symposium and Medical Imaging Conference and 16th International Workshop on Room Temperature Semiconductor, Dresden, Germany, 2008, pp. 1123–1125, ISBN 978-1-4244-2714-7, ISSN 1095- 7863.

D. Obrebski, K. Kucharski, M. Grodner, A. Kokoszka, A. Malinowski, J. Lesinski, D. Tomaszewski, and J. Malesinska, “Development of MPW Service for Academises Based on ITE Proprietary CMOS Process,” in "Proceedings of MIXDES 2007". "Department of Microelectronics and Computer Science, Technical University of Lodz", 2007, pp. 69–73.

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Published

2014-03-31

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